FDMC4435BZ FDMC4435BE-F126 Integrated Circuits Transistors MOSFET P-CH 8MLP
产品详情
| Part Status | Active |
| Automotive | No |
| PPAP | No |
| Product Category | Power MOSFET |
| Material | Si |
| Configuration | Single Quad Drain Triple Source |
| Process Technology | TMOS |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 30 |
| Maximum Gate Source Voltage (V) | ±25 |
| Maximum Continuous Drain Current (A) | 8.5 |
| Maximum Drain Source Resistance (MOhm) | 20@10V |
| Typical Gate Charge @ Vgs (nC) | 33@10V|17@4.5V |
同类产品
